| PART |
Description |
Maker |
| R1LV0816ABG-5SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
| I1LV3216ISD-5SI I1LV3216ISD-7SI R1LV3216RSD-5S R1L |
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)
|
Renesas Electronics Corporation
|
| R1LV0208BSA-5SI-B0 R1LV0208BSA-5SI-S0 R1LV0208BSA- |
2Mb Advanced LPSRAM (256k word x 8bit)
|
Renesas Electronics Corporation
|
| GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| R1WV3216R08 R1WV3216RBG-8SI R1WV3216RBG-8SR R1WV32 |
32Mb Advanced LPSRAM (2M wordx16bit)
|
Renesas Electronics Corporation
|
| R1LV1616R0709 R1LV1616RBG-7S R1LV1616RBG-8S R1LV16 |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
|
Renesas Electronics Corporation
|
| RMLV0408E-16 |
4Mb Advanced LPSRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
| GS881E18T-11 GS881E18T-11I GS881E18T-11.5 |
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
|
GSI Technology, Inc.
|
| MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| MT55L512L18F |
8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| TC554001FTI-85 TC554001FTI-10 |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| MT58L256L36P MT58L256L32P MT58L256V32P MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
|
Micron Technology
|
